RD35HUP2

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The RD35HUP2 from Mitsubishi Electric US, Inc. is a RF Transistor with Frequency 175 to 530 MHz, Power 45.44 dBm, Power(W) 34.99 W, Supply Voltage 12.5 V, Input Power 3 W. Tags: Flanged. More details for RD35HUP2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RD35HUP2
  • Manufacturer
    Mitsubishi Electric US, Inc.
  • Description
    175 to 530 MHz, MOSFET Transistor

General Parameters

  • Transistor Type
    MOSFET
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Mobile, Radio, HF/VHF/UHF
  • CW/Pulse
    CW
  • Frequency
    175 to 530 MHz
  • Power
    45.44 dBm
  • Power(W)
    34.99 W
  • Supply Voltage
    12.5 V
  • Threshold Voltage
    1.6 to 2.4 V
  • Input Power
    3 W
  • Drain Efficiency
    0.55
  • Drain Bias Current
    0.15 mA
  • Quiescent Drain Current
    500 mA
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -40 to 175 Degree C

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