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The RD70HUP2 from Mitsubishi Electric US, Inc. is a RF Transistor with Frequency 175 to 530 MHz, Power 48.75 to 49.24 dBm, Power(W) 83.95 W, Supply Voltage 12.5 V, Input Power 4 to 5 W. Tags: Flanged. More details for RD70HUP2 can be seen below.
13.8 W Doherty GaN Power Transistor from 2.3 to 2.4 GHz for 5G Base Stations
400 W, GaN on SiC HEMT from DC to 2.9 GHz
410 W Doherty GaN-on-SiC HEMT from 3700 to 4100 MHz
25 W LDMOS FET from 500 to 1400 MHz
450 W GaN-on-SiC HEMT from 758 to 960 MHz
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