RD70HUP2

RF Transistor by Mitsubishi Electric US, Inc.

Note : Your request will be directed to Mitsubishi Electric US, Inc..

The RD70HUP2 from Mitsubishi Electric US, Inc. is a RF Transistor with Frequency 175 to 530 MHz, Power 48.75 to 49.24 dBm, Power(W) 83.95 W, Supply Voltage 12.5 V, Input Power 4 to 5 W. Tags: Flange. More details for RD70HUP2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RD70HUP2
  • Manufacturer
    Mitsubishi Electric US, Inc.
  • Description
    175 to 530 MHz, MOSFET Transistor

General Parameters

  • Transistor Type
    MOSFET
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Mobile, Radio, HF, VHF, UHF, Radar, Communication
  • CW/Pulse
    CW
  • Frequency
    175 to 530 MHz
  • Power
    48.75 to 49.24 dBm
  • Power(W)
    83.95 W
  • Supply Voltage
    12.5 V
  • Threshold Voltage
    1.6 to 2.4 V
  • Input Power
    4 to 5 W
  • Drain Bias Current
    0.15 mA
  • Quiescent Drain Current
    1000 mA
  • Package Type
    Flange
  • RoHS
    Yes
  • Storage Temperature
    -40 to 175 Degree C

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