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MwT-9F Image

The MwT-9F from Microwave Technology is a GaAs FET that operates up to 18 GHz. It provides a small signal gain of 11 dB, a P1dB of 26.5 dBm, and has a power-added efficiency of 35%. The transistor has a nominal gate length of 0.25 microns and a gate width of 750 microns, making it ideal for applications requiring medium linear power. It can be used as the driver stage in high power communication amplifiers or in broad-band military amplifiers. This transistor is available as a Chip/die and in three other package types. It is suitable for use in commercial, military, and high-reliability space applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    MicroWave Technology
  • Description
    18 GHz GaAs MESFET for Military and Commercial Applications

General Parameters

  • Transistor Type
  • Technology
  • Application Industry
    Commercial, Military, Space
  • CW/Pulse
  • Frequency
    DC to 18 GHz
  • P1dB
    26.5 dBm
  • OIP3
    36 dBm
  • Small Signal Gain
    11 dB
  • Power Added Effeciency
  • Transconductance
    130 to 140 mS
  • Supply Voltage
    2 to 7 V
  • Drain Gate Voltage
    -16 to -14 V
  • Voltage - Gate-Source (Vgs)
    -16 to -14 V
  • Thermal Resistance
    60 to 165 Degree C/W
  • Package Type
  • Dimension
    485 x 315 x 100 um
  • Grade
    Commercial, Military, Space
  • Tags

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