MwT-PH30F

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MwT-PH30F Image

The MwT-PH30F from MicroWave Technology is an AlGaAs/InGaAs pHEMT Transistor that operates from DC to 18 GHz. It delivers a saturated output power of 28 dBm with a small signal gain of 14 dB and has a power-added efficiency of 45%. This transistor has a 0.25-micron gate length and 800-micron gate width, which makes it ideal for applications requiring high-gain and medium power levels. It is available as a bare die that measures 530 x 375 x 100 microns and is ideal for commercial, military, and Hi-Rel space applications.

Product Specifications

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Product Details

  • Part Number
    MwT-PH30F
  • Manufacturer
    MicroWave Technology
  • Description
    AlGaAs/InGaAs pHEMT Transistor Die from DC to 18 GHz

General Parameters

  • Transistor Type
    pHEMT
  • Technology
    AlGaAs/InGaAs
  • Application Industry
    Commercial, Military, Space
  • CW/Pulse
    CW
  • Frequency
    DC to 18 GHz
  • P1dB
    25 dBm
  • Saturated Power
    28 dBm
  • OIP3
    34 dBm
  • Small Signal Gain
    14 dB
  • Power Added Effeciency
    45%
  • Transconductance
    200 mS
  • Supply Voltage
    2.5 to 8 V
  • Drain Gate Voltage
    -18 V
  • Voltage - Gate-Source (Vgs)
    -18 V
  • Thermal Resistance
    50 to 170 Degree C/W
  • Package Type
    Chip
  • Dimension
    530 x 375 x 100 um
  • Grade
    Commercial, Military, Space
  • Tags
    AlGaAs/InGaAs

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