The A2G22S160-01S from Freescale is a GaN transistor that operates from 1800 MHz to 2200 MHz with an average output power of 32 W. This GaN transistor has been designed for cellular base stations and Doherty applications. It has high terminal impedance for optimal broadband performance. The transistor has a power gain of 19.6 dB, an efficiency of 38% and P1dB of 125 Watts.

Product Specifications

    Product Details

    • Part Number :
      A2G22S160-01S
    • Manufacturer :
      NXP Semiconductors
    • Description :
      AIRFAST RF Power GaN Transistor, 1800-2200 MHz, 32 W AVG., 48 V

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Wireless Infrastructure
    • Application :
      Cellular, Communication
    • CW/Pulse :
      Pulse, CW
    • Frequency :
      1.8 to 2.2 GHz
    • Power :
      45.05 dBm
    • Power(W) :
      31.99 W
    • CW Power :
      8 W
    • Pulsed Width :
      10 us
    • Duty_Cycle :
      0.1
    • Power Gain (Gp) :
      18.8 to 21.8 dB
    • Input Return Loss :
      -20 to -9 dB
    • VSWR :
      10.00:1
    • Supply Voltage :
      48 V
    • Threshold Voltage :
      1.5 to 3 Vdc
    • Breakdown Voltage - Drain-Source :
      150 V
    • Voltage - Gate-Source (Vgs) :
      -8 V
    • Drain Efficiency :
      0.38
    • Drain Current :
      150 mA
    • Impedance Zs :
      50 Ohms
    • Thermal Resistance :
      1.7 °C/W
    • Package Type :
      Flange
    • Package :
      NI--400S--2S
    • RoHS :
      Yes
    • Operating Temperature :
      -55 to 150 Degree C
    • Storage Temperature :
      -65 to 150 Degree C

    Technical Documents

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