The A2G22S160-01S from Freescale is a GaN transistor that operates from 1800 MHz to 2200 MHz with an average output power of 32 W. This GaN transistor has been designed for cellular base stations and Doherty applications. It has high terminal impedance for optimal broadband performance. The transistor has a power gain of 19.6 dB, an efficiency of 38% and P1dB of 125 Watts.

Product Specifications

  • Part Number
  • Manufacturer
    NXP Semiconductors
  • Description
    1800 MHz to 2200 MHz Power GaN Transistor
  • Transistor Type
  • Application
  • Frequency
    1800 to 2200 MHz
  • Gain
    19.6 dB
  • Power
    45.05 dBm
  • P1dB
    51 dBm
  • Supply Voltage
    48 V
  • Thermal Resistance
    1.7 Degree C/W
  • Package
  • Storage Temperature
    -65 to 150 Degrees C
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