A2G22S160-01S Image

A2G22S160-01S

RF Transistor by NXP Semiconductors

The A2G22S160-01S from Freescale is a GaN transistor that operates from 1800 MHz to 2200 MHz with an average output power of 32 W. This GaN transistor has been designed for cellular base stations and Doherty applications. It has high terminal impedance for optimal broadband performance. The transistor has a power gain of 19.6 dB, an efficiency of 38% and P1dB of 125 Watts.

Product Specifications

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Product Details

  • Part Number
    A2G22S160-01S
  • Manufacturer
    NXP Semiconductors
  • Description
    AIRFAST RF Power GaN Transistor, 1800-2200 MHz, 32 W AVG., 48 V

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure
  • Application
    Cellular, Communication
  • CW/Pulse
    Pulse, CW
  • Frequency
    1.8 to 2.2 GHz
  • Power
    45.05 dBm
  • Power(W)
    31.99 W
  • CW Power
    8 W
  • Pulsed Width
    10 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    18.8 to 21.8 dB
  • Input Return Loss
    -20 to -9 dB
  • VSWR
    10.00:1
  • Supply Voltage
    48 V
  • Threshold Voltage
    1.5 to 3 Vdc
  • Breakdown Voltage - Drain-Source
    150 V
  • Voltage - Gate-Source (Vgs)
    -8 V
  • Drain Efficiency
    0.38
  • Drain Current
    150 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    1.7 °C/W
  • Package Type
    Flange
  • Package
    NI--400S--2S
  • RoHS
    Yes
  • Operating Temperature
    -55 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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