The A2I22D050N from NXP Semiconductors is a RF Transistor with Frequency 2 to 2.2 GHz, Power Gain (Gp) 31.5 dB, Power 37.24 dBm, P1dB 55 W, Supply Voltage 28 V. More details for A2I22D050N can be seen below.

Product Specifications

  • Part Number
    A2I22D050N
  • Manufacturer
    NXP Semiconductors
  • Description
    2 to 2.2 GHz, 5.3 W, 28 V Airfast RF LDMOS Wideband Integrated Power Amplifiers
  • Transistor Type
  • Class
    Class AB
  • Features
    Power Amplifier
  • Frequency
    2 to 2.2 GHz
  • Power Gain (Gp)
    31.5 dB
  • Power
    37.24 dBm
  • P1dB
    55 W
  • Supply Voltage
    28 V
  • Effeciency
    18.3%
  • Package
    Die
  • RoHS
    Yes
  • Tags
    Freescale Airfast
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