The A2I22D050N from NXP Semiconductors is a RF Transistor with Frequency 2 to 2.2 GHz, Power Gain (Gp) 31.5 dB, Power 37.24 dBm, P1dB 55 W, Supply Voltage 28 V. More details for A2I22D050N can be seen below.
450 Watt, 50 Volt, 3.1 to 3.5 GHz, GaN RF IMFET
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15W, 300 MHz to 1.215 GHz, GaN RF Input-Matched Transistor
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