The A2I25D012N from NXP Semiconductors is a RF Transistor with Frequency 2.3 to 2.69 GHz, Power Gain (Gp) 33 dB, Power 33.42 dBm, P1dB 55 W, Supply Voltage 28 V. More details for A2I25D012N can be seen below.

Product Specifications

  • Part Number
    A2I25D012N
  • Manufacturer
    NXP Semiconductors
  • Description
    2.3 to 2.69 GHz, 2.2W, 28 V Airfast RF LDMOS Wideband Integrated Power Amplifiers
  • Transistor Type
  • Class
    Class AB
  • Features
    Power Amplifier
  • Frequency
    2.3 to 2.69 GHz
  • Power Gain (Gp)
    33 dB
  • Power
    33.42 dBm
  • P1dB
    55 W
  • Supply Voltage
    28 V
  • Effeciency
    19.8%
  • Package
    Die
  • RoHS
    Yes
  • Tags
    Freescale Airfast
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