The A2I25D012N from NXP Semiconductors is a RF Transistor with Frequency 2.1 to 2.9 GHz, Power 33.42 dBm, Power(W) 2.2 W, Duty_Cycle 0.1, Power Gain (Gp) 31 to 35 dB. More details for A2I25D012N can be seen below.

Product Specifications

  • Part Number
    A2I25D012N
  • Manufacturer
    NXP Semiconductors
  • Description
    Airfast RF Power LDMOS Transistor, 2300-2690 MHz, 1.3 W Avg., 28 V
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Cellular, Base Station, WCDMA
  • CW/Pulse
    Pulse, CW
  • Frequency
    2.1 to 2.9 GHz
  • Power
    33.42 dBm
  • Power(W)
    2.2 W
  • CW Power
    13 to 24 W
  • Pulsed Width
    10 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    31 to 35 dB
  • VSWR
    10.00:1
  • Supply Voltage
    28 V
  • Threshold Voltage
    0.8 to 1.6 Vdc
  • Voltage - Gate-Source (Vgs)
    0 to 10 Vdc
  • Drain Efficiency
    0.198
  • Drain Current
    45 to 110 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    3.3 °C/W
  • Package Type
    Flange
  • Package
    TO--270WB--15 PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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