A2T09VD250N Image

A2T09VD250N

The A2T09VD250N from NXP Semiconductors is a RF Transistor with Frequency 716 to 960 MHz, Power 48.13 dBm, Power(W) 65.01 W, Duty_Cycle 0.1, Power Gain (Gp) 21 to 24 dB. Tags: Flange. More details for A2T09VD250N can be seen below.

Product Specifications

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Product Details

  • Part Number
    A2T09VD250N
  • Manufacturer
    NXP Semiconductors
  • Description
    Airfast, RF Power LDMOS Transistor, 720-960 MHz, 80 W Avg., 48 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Cellular, Base Station, WCDMA
  • CW/Pulse
    Pulse, CW
  • Frequency
    716 to 960 MHz
  • Power
    48.13 dBm
  • Power(W)
    65.01 W
  • CW Power
    308 to 363 W
  • Pulsed Power
    308 to 363 W
  • Pulsed Width
    10 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    21 to 24 dB
  • Input Return Loss
    -18 to -10 dB
  • VSWR
    10.00:1
  • Polarity
    N--Channel
  • Supply Voltage
    48 V
  • Threshold Voltage
    1.3 to 2.3 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.348
  • Drain Current
    1000 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.56 °C/W
  • Package Type
    Flange
  • Package
    TO--270WB--6A PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents

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