A2T18H100-25S Image

A2T18H100-25S

RF Transistor by NXP Semiconductors

The A2T18H100-25S from NXP Semiconductors is a RF Transistor with Frequency 1.805 to 1.995 GHz, Power 42.55 dBm, Power(W) 17.99 W, Duty_Cycle 0.1, Power Gain (Gp) 17.6 to 20.6 dB. Tags: Flange. More details for A2T18H100-25S can be seen below.

Product Specifications

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Product Details

  • Part Number
    A2T18H100-25S
  • Manufacturer
    NXP Semiconductors
  • Description
    Airfast RF Power LDMOS Transistor, 1805-1995 MHz, 15 W Avg., 28 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Cellular, Base Station, WCDMA
  • CW/Pulse
    Pulse, CW
  • Frequency
    1.805 to 1.995 GHz
  • Power
    42.55 dBm
  • Power(W)
    17.99 W
  • Pulsed Power
    72 to 100 W
  • Pulsed Width
    10 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    17.6 to 20.6 dB
  • VSWR
    10.00:1
  • Polarity
    N--Channel
  • Supply Voltage
    28 V
  • Threshold Voltage
    0.8 to 1.6 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.502
  • Drain Current
    230 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.74 °C/W
  • Package Type
    Flange
  • Package
    NI--780S--4L4S
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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