A2T18H455W23N Image

A2T18H455W23N

The A2T18H455W23N from NXP Semiconductors is a RF Transistor with Frequency 1.805 to 1.88 GHz, Power 49.4 dBm, Power(W) 87.1 W, Duty_Cycle 0.1, Power Gain (Gp) 14 to 17 dB. Tags: Flange. More details for A2T18H455W23N can be seen below.

Product Specifications

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Product Details

  • Part Number
    A2T18H455W23N
  • Manufacturer
    NXP Semiconductors
  • Description
    AIRFAST RF POWER LDMOS TRANSISTOR 1805-1880 MHz, 87 W AVG., 31.5 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Cellular, Base Station, WCDMA
  • CW/Pulse
    Pulse, CW
  • Frequency
    1.805 to 1.88 GHz
  • Power
    49.4 dBm
  • Power(W)
    87.1 W
  • CW Power
    417 to 575 W
  • Pulsed Width
    10 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    14 to 17 dB
  • VSWR
    10.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    31.5 V
  • Threshold Voltage
    1.05 to 2.2 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.484
  • Drain Current
    1080 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.23 °C/W
  • Package Type
    Flange
  • Package
    OM--1230--4L2S PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    -40 to 125 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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