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  6. A2T18S160W31S

The A2T18S160W31S from NXP Semiconductors is a RF Transistor with Frequency 1.805 to 1.99 GHz, Power 45.05 dBm, Power(W) 31.99 W, Duty_Cycle 0.1, Power Gain (Gp) 18.5 to 21.5 dB. Tags: Flanged. More details for A2T18S160W31S can be seen below.

Product Specifications

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Product Details

  • Part Number
    A2T18S160W31S
  • Manufacturer
    NXP Semiconductors
  • Description
    AIRFAST RF POWER LDMOS TRANSISTORS 1805-1995 MHz, 32 W AVG. 28 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Cellular, Base Station, 3G / WCDMA
  • CW/Pulse
    Pulse, CW
  • Frequency
    1.805 to 1.99 GHz
  • Power
    45.05 dBm
  • Power(W)
    31.99 W
  • CW Power
    129 to 173 W
  • Pulsed Width
    10 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    18.5 to 21.5 dB
  • Input Return Loss
    -12 to -6.5 dB
  • VSWR
    10.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    28 V
  • Threshold Voltage
    1.4 to 2.2 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.316
  • Drain Current
    1000 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.36 °C/W
  • Package Type
    Flanged
  • Package
    NI--780S--2L2LA
  • RoHS
    Yes
  • Operating Temperature
    -40 to 125 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
View details on the manufacturer's website
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