A2T26H165-24S Image

A2T26H165-24S

RF Transistor by NXP Semiconductors

The A2T26H165-24S from NXP Semiconductors is a RF Transistor with Frequency 2.49 to 2.69 GHz, Power 45.05 dBm, Power(W) 31.99 W, Duty_Cycle 0.1, Power Gain (Gp) 14 to 17 dB. Tags: Flange. More details for A2T26H165-24S can be seen below.

Product Specifications

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Product Details

  • Part Number
    A2T26H165-24S
  • Manufacturer
    NXP Semiconductors
  • Description
    Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 32 W Avg., 28 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Cellular, Base Station, WCDMA
  • CW/Pulse
    Pulse, CW
  • Frequency
    2.49 to 2.69 GHz
  • Power
    45.05 dBm
  • Power(W)
    31.99 W
  • CW Power
    155 to 209 W
  • Pulsed Power
    155 to 209 W
  • Pulsed Width
    10 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    14 to 17 dB
  • VSWR
    10.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    28 V
  • Threshold Voltage
    0.8 to 2.2 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.454
  • Drain Current
    400 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.45 °C/W
  • Package Type
    Flange
  • Package
    NI--780S--4L2L
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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