A2T27S020N Image

A2T27S020N

RF Transistor by NXP Semiconductors

The A2T27S020N from NXP Semiconductors is a RF Transistor with Frequency 400 MHz to 2.7 GHz, Power 33.98 dBm, Power(W) 2.5 W, Power Gain (Gp) 20 to 23 dB, VSWR 10.00:1. Tags: Flange. More details for A2T27S020N can be seen below.

Product Specifications

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Product Details

  • Part Number
    A2T27S020N
  • Manufacturer
    NXP Semiconductors
  • Description
    AIRFAST RF POWER LDMOS TRANSISTORS 400-3800 MHz, 2.5 W AVG., 28 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Cellular, Base Station, WCDMA
  • CW/Pulse
    CW
  • Frequency
    400 MHz to 2.7 GHz
  • Power
    33.98 dBm
  • Power(W)
    2.5 W
  • CW Power
    20 to 28 W
  • Power Gain (Gp)
    20 to 23 dB
  • VSWR
    10.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    28 V
  • Threshold Voltage
    0.8 to 1.6 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.209
  • Drain Current
    185 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    1.6 °C/W
  • Package Type
    Flange
  • Package
    TO--270--2 PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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