The A3G22H400-04S from NXP Semiconductors is a RF Transistor with Frequency 1.8 to 2.2 GHz, Power 48.97 dBm, Power(W) 79 W, Power Gain (Gp) 14.3 to 17.3 dB, Supply Voltage 48 Vdc. Tags: Flange. More details for A3G22H400-04S can be seen below.

Product Specifications

    Product Details

    • Part Number :
      A3G22H400-04S
    • Manufacturer :
      NXP Semiconductors
    • Description :
      1800 to 2200 MHz, 79 W AVG., 48 V, AIRFAST RF Power GaN Transistor

    General Parameters

    • Technology :
      GaN on SiC
    • Application Industry :
      Wireless Infrastructure
    • Application Type :
      WCDMA
    • Application :
      Cellular, Base Station
    • CW/Pulse :
      CW, Pulse
    • Frequency :
      1.8 to 2.2 GHz
    • Power :
      48.97 dBm
    • Power(W) :
      79 W
    • Power Gain (Gp) :
      14.3 to 17.3 dB
    • Class :
      C, AB
    • Supply Voltage :
      48 Vdc
    • Threshold Voltage :
      -3.8 to -2.3 Vdc(Gate Threshold Voltage)
    • Breakdown Voltage :
      150 Vdc(Gate Source)
    • Voltage - Drain-Source (Vdss) :
      125 Vdc
    • Voltage - Gate-Source (Vgs) :
      -8 to 0 Vdc
    • Drain Efficiency :
      52 to 55.8%
    • Quiescent Drain Current :
      200 mA
    • Impedance Zs :
      50 Ohms
    • Package Type :
      Flange
    • RoHS :
      Yes
    • Operating Temperature :
      -55 to 150 Degree C
    • Storage Temperature :
      -65 to 150 Degree C
    • Note :
      Gate Forward Current : 49 mA, Gate Source Leakage Current : -5.85 mAdc, P3 dB : 400 W

    Technical Documents

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