The A3G26D055N from NXP Semiconductors is a Doherty RF Power GaN Transistor that operates from 100 to 2690 MHz. It delivers an output power of 8 W with a gain of up to 18 dB and has an efficiency of 54.1%. The transistor has a high terminal impedance and is able to withstand extremely high output VSWR for optimal broadband performance. It is designed for low complexity analog or digital linearization systems and is optimized for massive MIMO active antenna systems for 5G base stations.
The A3G26D055N requires a DC supply of 48 V and is available in a DFN package that measures 7 x 6.5 mm.