A3G26D055N

A3G26D055N Image

The A3G26D055N from NXP Semiconductors is a Doherty RF Power GaN Transistor that operates from 100 to 2690 MHz. It delivers an output power of 8 W with a gain of up to 18 dB and has an efficiency of 54.1%. The transistor has a high terminal impedance and is able to withstand extremely high output VSWR for optimal broadband performance. It is designed for low complexity analog or digital linearization systems and is optimized for massive MIMO active antenna systems for 5G base stations.

The A3G26D055N requires a DC supply of 48 V and is available in a DFN package that measures 7 x 6.5 mm.

Product Specifications

View similar products

Product Details

  • Part Number
    A3G26D055N
  • Manufacturer
    NXP Semiconductors
  • Description
    Doherty GaN Power Transistor from 100 to 2690 MHz

General Parameters

  • Technology
    GaN on SiC
  • Application Industry
    Cellular, Wireless Infrastructure, Base Station
  • Application
    Cellular, 5G
  • CW/Pulse
    CW
  • Frequency
    100 to 2690 MHz
  • Power
    37.48 39.03 dBm
  • Power(W)
    5.6 to 8 W
  • Power Gain (Gp)
    18 to 20 dB
  • Class
    AB, C
  • Supply Voltage
    48 V
  • Threshold Voltage
    -3.5 to -2.3 V
  • Current
    40 mA
  • Drain Efficiency
    40.6 to 54.1 %
  • Drain Leakage Current (Id)
    3 mA
  • Gate Leakage Current (Ig)
    -3 mA
  • Package Type
    Surface Mount
  • Package
    DFN
  • Dimension
    7 x 6.5
  • RoHS
    Yes
  • Grade
    Commerical
  • Operating Temperature
    -55 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    P3dB : 44.5 dBm

Technical Documents