A3G26H501W17S Image

A3G26H501W17S

RF Transistor by NXP Semiconductors (248 more products)

The A3G26H501W17S from NXP Semiconductors is a Doherty RF Power GaN Transistor that operates from 2496 to 2960 MHz. This asymmetrical transistor provides a P1dB of 56 watts with a power gain of over 12.7 dB and a drain efficiency of 40.7%. It has a pulse width of 10 µs, a duty cycle of 10%, and requires a supply voltage of 48 V. The device features high terminal impedances for optimal broadband performance and has an improved linearized error vector magnitude. It can withstand extremely high output VSWR and broadband operating conditions. This RoHS-compliant transistor is available in a surface-mount package and is ideal for cellular base station applications.

Product Specifications

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Product Details

  • Part Number
    A3G26H501W17S
  • Manufacturer
    NXP Semiconductors
  • Description
    56 W Doherty RF Power GaN Transistor from 2496 to 2960 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    GaN on SiC
  • Application Industry
    Cellular
  • Application Type
    WCDMA
  • Application
    Base Station
  • CW/Pulse
    CW, Pulse
  • Frequency
    2.496 to 2.69 GHz
  • Power
    57 dBm (P3dB)
  • Power(W)
    500 W ( P3dB)
  • Pulsed Width
    10 usec
  • Duty_Cycle
    10%
  • Gain
    12.7 to 15.7 dB
  • Power Gain (Gp)
    12.7 to 15.7 dB
  • Efficiency
    46.3 to 47.4 Percent
  • Supply Voltage
    48 V
  • Threshold Voltage
    -3.8 to -2.3 Vdc (Gate)
  • Breakdown Voltage - Drain-Source
    150 Vdc
  • Voltage - Drain-Source (Vdss)
    125 Vdc
  • Voltage - Gate-Source (Vgs)
    0 to -8 Vdc
  • Current
    300 mA
  • Drain Efficiency
    37 to 40.7 Percent
  • Gate Leakage Current (Ig)
    -9.9 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.9 to 1.23 C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Operating Temperature
    -55 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents

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