The A3G26H501W17S from NXP Semiconductors is a Doherty RF Power GaN Transistor that operates from 2496 to 2960 MHz. This asymmetrical transistor provides a P1dB of 56 watts with a power gain of over 12.7 dB and a drain efficiency of 40.7%. It has a pulse width of 10 µs, a duty cycle of 10%, and requires a supply voltage of 48 V. The device features high terminal impedances for optimal broadband performance and has an improved linearized error vector magnitude. It can withstand extremely high output VSWR and broadband operating conditions. This RoHS-compliant transistor is available in a surface-mount package and is ideal for cellular base station applications.