A3G35H100-04S Image

A3G35H100-04S

RF Transistor by NXP Semiconductors

The A3G35H100-04S from NXP Semiconductors is a RF Transistor with Frequency 3.4 to 3.6 GHz, Power 41.46 dBm, Power(W) 14 W, Power Gain (Gp) 13 to 15 dB, Supply Voltage 48 Vdc. Tags: Flange. More details for A3G35H100-04S can be seen below.

Product Specifications

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Product Details

  • Part Number
    A3G35H100-04S
  • Manufacturer
    NXP Semiconductors
  • Description
    3400 to 3600 MHz, 14 W AVG., 48 V, AIRFAST RF Power GaN Transistor

General Parameters

  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure
  • Application Type
    WCDMA
  • Application
    Cellular, Base Station
  • CW/Pulse
    CW, Pulse
  • Frequency
    3.4 to 3.6 GHz
  • Power
    41.46 dBm
  • Power(W)
    14 W
  • Power Gain (Gp)
    13 to 15 dB
  • Class
    A, AB
  • Supply Voltage
    48 Vdc
  • Threshold Voltage
    -3.8 to -2.3 Vdc(Gate Threshold Voltage)
  • Breakdown Voltage
    150 Vdc(Gate Source)
  • Voltage - Drain-Source (Vdss)
    125 Vdc
  • Voltage - Gate-Source (Vgs)
    -8 to 0 Vdc
  • Drain Efficiency
    37.7 to 42.5 %
  • Quiescent Drain Current
    80 mA
  • Impedance Zs
    50 Ohms
  • Package Type
    Flange
  • RoHS
    Yes
  • Operating Temperature
    -55 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Gate Forward Current : 13.4 mA, Gate Source Leakage Current : -2.5 mAdc, P3 dB : 100 W

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