The A3G35H100-04S from NXP Semiconductors is a RF Transistor with Frequency 3.4 to 3.6 GHz, Power 41.46 dBm, Power(W) 14 W, Power Gain (Gp) 13 to 15 dB, Supply Voltage 48 Vdc. Tags: Flange. More details for A3G35H100-04S can be seen below.

Product Specifications

    Product Details

    • Part Number :
      A3G35H100-04S
    • Manufacturer :
      NXP Semiconductors
    • Description :
      3400 to 3600 MHz, 14 W AVG., 48 V, AIRFAST RF Power GaN Transistor

    General Parameters

    • Technology :
      GaN on SiC
    • Application Industry :
      Wireless Infrastructure
    • Application Type :
      WCDMA
    • Application :
      Cellular, Base Station
    • CW/Pulse :
      CW, Pulse
    • Frequency :
      3.4 to 3.6 GHz
    • Power :
      41.46 dBm
    • Power(W) :
      14 W
    • Power Gain (Gp) :
      13 to 15 dB
    • Class :
      A, AB
    • Supply Voltage :
      48 Vdc
    • Threshold Voltage :
      -3.8 to -2.3 Vdc(Gate Threshold Voltage)
    • Breakdown Voltage :
      150 Vdc(Gate Source)
    • Voltage - Drain-Source (Vdss) :
      125 Vdc
    • Voltage - Gate-Source (Vgs) :
      -8 to 0 Vdc
    • Drain Efficiency :
      37.7 to 42.5 %
    • Quiescent Drain Current :
      80 mA
    • Impedance Zs :
      50 Ohms
    • Package Type :
      Flange
    • RoHS :
      Yes
    • Operating Temperature :
      -55 to 150 Degree C
    • Storage Temperature :
      -65 to 150 Degree C
    • Note :
      Gate Forward Current : 13.4 mA, Gate Source Leakage Current : -2.5 mAdc, P3 dB : 100 W

    Technical Documents

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