The A3T18H360W23S from NXP Semiconductors is a RF Transistor with Frequency 1840 MHz, Gain 17.5 dB, Power 47 dBm (56 W), Supply Voltage 28 Vdc, Drain Current 700 mA. More details for A3T18H360W23S can be seen below.

Product Specifications

  • Part Number
    A3T18H360W23S
  • Manufacturer
    NXP Semiconductors
  • Description
    1805-1880 MHz, 56 W Avg., 28 V Airfast RF Power LDMOS Transistor
  • Transistor Type
  • Application
    WCDMA
  • Application Type
    Cellular, Base Stations
  • Grade
    Commercial
  • Frequency
    1840 MHz
  • Gain
    17.5 dB
  • Power
    47 dBm (56 W)
  • Supply Voltage
    28 Vdc
  • Drain Current
    700 mA
  • Voltage - Drain-Source (Vdss)
    28 Vdc
  • Voltage - Gate-Source (Vgs)
    0.8 Vdc
  • Package Type
    Flanged
  • RoHS
    Yes
  • Note
    ACPR:- -34 dBc, PAR:- 9.9 dB
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