The A3T26H200W24S from NXP Semiconductors is a RF Transistor with Frequency 2590 MHz, Gain 16.3 dB, Power 45 dBm(37 W), Supply Voltage 28 Vdc, Drain Current 350 mA. More details for A3T26H200W24S can be seen below.

Product Specifications

  • Part Number
    A3T26H200W24S
  • Manufacturer
    NXP Semiconductors
  • Description
    2496-2690 MHz, 37 W Avg., 28 V Airfast RF Power LDMOS Transistor
  • Transistor Type
  • Application
    WCDMA
  • Application Type
    Cellular, Base Stations
  • Grade
    Commercial
  • Frequency
    2590 MHz
  • Gain
    16.3 dB
  • Power
    45 dBm(37 W)
  • Supply Voltage
    28 Vdc
  • Drain Current
    350 mA
  • Voltage - Drain-Source (Vdss)
    28 Vdc
  • Voltage - Gate-Source (Vgs)
    0.5 Vdc
  • Package Type
    Flanged
  • RoHS
    Yes
  • Note
    ACPR:- -30.4 dBc, PAR:- 9.9 dB
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