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The AFT09MP055N from NXP Semiconductors is a RF Transistor with Frequency 764 to 941 MHz, Power 47.4 dBm, Power(W) 54.95 W, P1dB 47.6 dBm, Power Gain (Gp) 17.5 dB. Tags: Flanged. More details for AFT09MP055N can be seen below.
300 W CW/Pulsed GaN HEMT from 1.2 to 1.4 GHz for Radar Applications
200 W Asymmetrical Doherty GaN HEMT from 2520 to 2630 MHz
330 W GaN on SiC HEMT from 2.3 to 2.5 GHz
1.2 kW Solid-State Power Amplifier from 1 to 6 GHz
Surface Mount Conical RF Chokes from 1.3 to 3.5 uH
1 mm (Female) to WR-10 Right-Angle Adapter from 75 to 110 GHz
20 W Directional Coupler from 33 to 36 GHz
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