AFT09MS007N Image

AFT09MS007N

RF Transistor by NXP Semiconductors

The AFT09MS007N from NXP Semiconductors is a RF Transistor with Frequency 1.8 to 941 MHz, Power 38.45 dBm, Power(W) 7 W, P1dB 38.6 dBm, Power Gain (Gp) 15.2 dB. Tags: Surface Mount. More details for AFT09MS007N can be seen below.

Product Specifications

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Product Details

  • Part Number
    AFT09MS007N
  • Manufacturer
    NXP Semiconductors
  • Description
    Wideband RF Power LDMOS Transistor, 136-941 MHz, 7 W, 7.5 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Mobile, Radio
  • CW/Pulse
    CW
  • Frequency
    1.8 to 941 MHz
  • Power
    38.45 dBm
  • Power(W)
    7 W
  • CW Power
    7 W
  • P1dB
    38.6 dBm
  • Power Gain (Gp)
    15.2 dB
  • VSWR
    65.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    7.5 V
  • Threshold Voltage
    1.6 to 2.6 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 12 Vdc
  • Drain Efficiency
    0.71
  • Drain Current
    100 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    1.1 °C/W
  • Package Type
    Surface Mount
  • Package
    PLD--1.5W
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents

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