The AFT09MS015N from NXP Semiconductors is a RF Transistor with Frequency 136 to 941 MHz, Power 42.04 dBm, Power(W) 16 W, P1dB 42 dBm, Power Gain (Gp) 17.2 dB. More details for AFT09MS015N can be seen below.

Product Specifications

  • Part Number
    AFT09MS015N
  • Manufacturer
    NXP Semiconductors
  • Description
    Wideband RF Power LDMOS Transistor, 136-941 MHz, 16 W, 12.5 V
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Mobile, Radio
  • CW/Pulse
    CW
  • Frequency
    136 to 941 MHz
  • Power
    42.04 dBm
  • Power(W)
    16 W
  • CW Power
    16 W
  • P1dB
    42 dBm
  • Power Gain (Gp)
    17.2 dB
  • VSWR
    65.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    12.5 V
  • Threshold Voltage
    1.8 to 2.6 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 12 Vdc
  • Drain Efficiency
    0.77
  • Drain Current
    100 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    1 °C/W
  • Package Type
    Surface Mount
  • Package
    PLD--1.5W
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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