The AFT09MS015N from NXP Semiconductors is a RF Transistor with Frequency 136 to 941 MHz, Gain 16 to 18.5 dB, Power 41.76 to 42.04 dBm, Input Power 0.23 to 0.38 W, Voltage - Drain-Source (Vdss) 0.15 V. More details for AFT09MS015N can be seen below.
1805 to 1880 MHz, 89 W Airfast RF Power LDMOS Transistor
4500 to 5900 MHz GaN HEMT for C-Band Radar Systems
GaN HEMT Transistor 1.2 to 1.4 GHz
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