AFT21H350W03SR6

RF Transistor by NXP Semiconductors (247 more products)

The AFT21H350W03SR6 from NXP Semiconductors is a RF Transistor with Frequency 2110 to 2170 MHz, Power 47.99 dBm, Power(W) 63 W, P1dB 100 W, Duty_Cycle 0.1. Tags: Chip. More details for AFT21H350W03SR6 can be seen below.

Product Specifications

    Product Details

    • Part Number :
      AFT21H350W03SR6
    • Manufacturer :
      NXP Semiconductors
    • Description :
      N--Channel Enhancement--Mode Lateral MOSFETs

    General Parameters

    • Transistor Type :
      LDMOS, MOSFET
    • Application Industry :
      Wireless Infrastructure
    • Application Type :
      WCDMA
    • Application :
      Base Station, Cellular
    • CW/Pulse :
      Pulse, CW
    • Frequency :
      2110 to 2170 MHz
    • Power :
      47.99 dBm
    • Power(W) :
      63 W
    • CW Power :
      110 to 195 W
    • P1dB :
      100 W
    • Duty_Cycle :
      0.1
    • Gain :
      16.4 to 16.5 dB
    • Power Gain (Gp) :
      15.5 to 18.5 dB
    • VSWR :
      10.00:1
    • Class :
      Class C
    • Supply Voltage :
      48 V
    • Threshold Voltage :
      0.8 to 1.6 Vdc
    • Voltage - Drain-Source (Vdss) :
      0.1 to 0.3 Vdc
    • Voltage - Gate-Source (Vgs) :
      0.8 to 1.6 Vdc
    • Drain Efficiency :
      43.6 to 47.1 dB
    • Drain Leakage Current (Id) :
      5 to 10 Adc
    • Quiescent Drain Current :
      750 mA
    • Gate Leakage Current (Ig) :
      1 uAdc
    • IMD :
      140 MHz
    • Junction Temperature (Tj) :
      -55 to 225 Degree C
    • Thermal Resistance :
      0.49 DegreeC/W
    • Package Type :
      Chip
    • RoHS :
      Yes
    • Operating Temperature :
      -40 to 125 Degree C
    • Storage Temperature :
      -65 to 150 Degree C
    • Note :
      P3dB : 400 W

    Technical Documents

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