AFT23H160-25S

AFT23H160-25S Image

The AFT23H160-25S from NXP Semiconductors is a RF Transistor with Frequency 2.3 to 2.4 GHz, Power 45.05 dBm, Power(W) 31.99 W, Duty_Cycle 0.1, Power Gain (Gp) 15.3 to 18.3 dB. Tags: Flange. More details for AFT23H160-25S can be seen below.

Product Specifications

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Product Details

  • Part Number
    AFT23H160-25S
  • Manufacturer
    NXP Semiconductors
  • Description
    Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 32 W Avg., 28 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Cellular, Base Station, WCDMA
  • CW/Pulse
    CW
  • Frequency
    2.3 to 2.4 GHz
  • Power
    45.05 dBm
  • Power(W)
    31.99 W
  • CW Power
    114 to 224 W
  • Pulsed Width
    10 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    15.3 to 18.3 dB
  • VSWR
    10.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    28 V
  • Threshold Voltage
    0.8 to 1.6 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.466
  • Drain Current
    450 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.4 °C/W
  • Package Type
    Flange
  • Package
    NI--880XS--4L4S
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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