The AFT26H200W03S is a RF Power LDMOS transistor from freescale which has been designed for mid-power macrocell base station applications in the 2496-2690 MHz band. In an asymmetrical doherty configuration, it delivers 54.6 dBm of peak power.

Product Specifications

  • Part Number
  • Manufacturer
    NXP Semiconductors
  • Description
    2496-2690 MHz, 45 W Avg., 28 V Airfast RF Power LDMOS Transistor
  • Transistor Type
  • Application
  • Application Industry
    Wireless Infrastructure
  • Application Type
    Base Stations
  • Frequency
    2496 to 2690 MHz
  • Gain
    14 dB
  • Power
    45 W
  • Supply Voltage
    28 V
  • Power Added Effeciency
    44.4 %
  • Package Type
    Flanged, Ceramic
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