The AFT26HW050SR3 and AFT26HW050GSR3 9 watt asymmetrical Doherty RF power LDMOS transistors are designed for metrocell base station applications in the 2496-2690 MHz band. It delivers 47.4 dBm of peak power.

Product Specifications

  • Part Number
    AFT26HW050S/GS
  • Manufacturer
    NXP Semiconductors
  • Description
    Airfast RF Product Family - LDMOS In-package asymmetric Doherty ideal for micro and metrocells from 2620 to 2690 MHz
  • Transistor Type
  • Application Type
    Micro Cells, Metro Cells
  • Frequency
    2620 to 2690 MHz
  • Power Gain (Gp)
    14.2 dB
  • Power
    9 W
  • P1dB
    42 W
  • Supply Voltage
    28 V
  • Power Added Effeciency
    0.471
  • Technology
    LDMOS
  • Thermal Resistance
    0.75
  • Package Type
    Flanged
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