The AFT27S006N 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz. This LDMOS transistor provides a gain of 22.5 dB, a P1dB of 6 W, has an effeciency of 20.2% and requires a supply voltage of 28 V. It is available in a compact plastic package.

Product Specifications

  • Part Number
    AFT27S006N
  • Manufacturer
    NXP Semiconductors
  • Description
    728 to 2700 MHz, 28.8 dBm Avg., 28 V Airfast RF Power LDMOS Transistor
  • Transistor Type
  • Application
    W-CDMA
  • Application Type
    Base Stations
  • Class
    Class AB
  • Frequency
    728 to 2700 MHz
  • Gain
    22.5 dB
  • Power
    37.78 dBm, 6 W
  • P1dB
    37.78 dBm, 6 W
  • Supply Voltage
    28 V
  • Effeciency
    20.2%
  • Thermal Resistance
    3.4 °C/W
  • Package
    Plastic
  • RoHS
    Yes
Need Help?

Need Help?

x
Let us know what you need, we can help find products that meet your requirement.