The AFT27S006N 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz. This LDMOS transistor provides a gain of 22.5 dB, a P1dB of 6 W, has an effeciency of 20.2% and requires a supply voltage of 28 V. It is available in a compact plastic package.

Product Specifications

  • Part Number
    AFT27S006N
  • Manufacturer
    NXP Semiconductors
  • Description
    Airfast RF Power LDMOS Transistor, 728-2700 MHz, 28.8 dBm Avg., 28 V
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Cellular, Base Station, WCDMA
  • CW/Pulse
    Pulse, CW
  • Frequency
    100 MHz to 3.6 GHz
  • Power
    28.8 dBm
  • Power(W)
    0.76 W
  • CW Power
    6 to 8.1 W
  • P1dB
    37.8 dBm
  • Power Gain (Gp)
    21 to 24.5 dB
  • Input Return Loss
    -16 to -10 dB
  • VSWR
    5.00:1
  • Supply Voltage
    28 V
  • Threshold Voltage
    0.8 to 1.6 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.202
  • Drain Current
    65 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    3.4 °C/W
  • Package Type
    Surface Mount
  • Package
    PLD--1.5W PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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