AFT27S006N Image

AFT27S006N

RF Transistor by NXP Semiconductors

The AFT27S006N 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz. This LDMOS transistor provides a gain of 22.5 dB, a P1dB of 6 W, has an effeciency of 20.2% and requires a supply voltage of 28 V. It is available in a compact plastic package.

Product Specifications

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Product Details

  • Part Number
    AFT27S006N
  • Manufacturer
    NXP Semiconductors
  • Description
    Airfast RF Power LDMOS Transistor, 728-2700 MHz, 28.8 dBm Avg., 28 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Cellular, Base Station, WCDMA
  • CW/Pulse
    Pulse, CW
  • Frequency
    100 MHz to 3.6 GHz
  • Power
    28.8 dBm
  • Power(W)
    0.76 W
  • CW Power
    6 to 8.1 W
  • P1dB
    37.8 dBm
  • Power Gain (Gp)
    21 to 24.5 dB
  • Input Return Loss
    -16 to -10 dB
  • VSWR
    5.00:1
  • Supply Voltage
    28 V
  • Threshold Voltage
    0.8 to 1.6 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.202
  • Drain Current
    65 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    3.4 °C/W
  • Package Type
    Surface Mount
  • Package
    PLD--1.5W PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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