The AFV121KGS from NXP Semiconductors is a RF Transistor with Frequency 960 MHz to 1.215 GHz, Power 60 dBm, Power(W) 1000 W, P1dB 60 dBm, Duty_Cycle 0.1. Tags: Flange. More details for AFV121KGS can be seen below.
50 W GaN Power Transistor from 8.9 to 9.4 GHz for X-Band Radars
20 W GaN HEMT from 2 to 2.2 GHz
18 GHz GaAs MESFET for Military and Commercial Applications
6 W RF Power GaN HEMT in a Plastic Package
520 W Thermally-Enhanced LDMOS Transistor from 925 to 960 MHz
400 W Thermally-Enhanced LDMOS Transistor from 859 to 960 MHz
500 W GaN HEMT from 2.9 to 3.5 GHz for S-Band Radar Systems
You can now find similar products from multiple companies on everything RF.
Copyright 2020 © everything RF All Rights Reseverd  |
Let us know what you need, we can help find products that meet your requirement.
Our team will get back to you shortly.
Our Newsletters keep you up to date with the RF & Microwave Industry.
Create an account on everything RF to get a range of benefits.
Login to everything RF to download datasheets, white papers and more content.
Content submitted here will be sent to our editorial team who will review and consider it for publication on the website. you will be emailed if this content is published on everything RF.
Please click on the button in the email to get access to this section.