The AFV121KH is a RF power transistor from Freescale has been designed for pulse applications operating from 960 to 1215 MHz. It delivers up to 1100 W of power(P1dB) with an efficiency of 51% and a gain of 17 dB. It requires a 50 V supply to operate. The transistors are suitable for use in pulse applications with large duty cycles and long pulses such as distance measuring equipment (DME), secondary radars and high power transponders for air traffic control.

Product Specifications

  • Part Number
    AFV121KH
  • Manufacturer
    NXP Semiconductors
  • Description
    Airfast RF Power LDMOS Transistor, 1000 W Peak, 960-1215 MHz, 50 V
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Aerospace & Defence, Radar, Wireless Infrastructure
  • Application
    Avionics, Radar
  • CW/Pulse
    Pulse
  • Frequency
    960 MHz to 1.215 GHz
  • Power
    60 dBm
  • Power(W)
    1000 W
  • P1dB
    60 dBm
  • Peak Output Power
    1060 to 1210 W
  • Pulsed Power
    1060 to 1210 W
  • Pulsed Width
    128 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    18.5 to 22 dB
  • Input Return Loss
    -15 to -9 dB
  • VSWR
    20.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    50 V
  • Threshold Voltage
    1.3 to 2.3 Vdc
  • Breakdown Voltage - Drain-Source
    112 V
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.522
  • Drain Current
    100 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.017 °C/W
  • Package Type
    Flange
  • Package
    NI--1230H--4S
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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