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MHT1002GN

RF Transistor by NXP Semiconductors (248 more products)

The MHT1002GN from NXP is a RF Power LDMOS Transistor that operates from 902 to 928 MHz. This transistor has been developed for use in consumer and commercial cooking applications. It provides up to 350 watts of CW power with a gain of over 20.1 dB and has a PAE of 66.9% at 915 MHz. This device requires a 48 V supply and is internally matched to 50 ohms. The transistor has an operating temperature rating of 150 C and die temperature rating of 225 C. The RoHS complaint transistor also has integrated ESD protection.

Product Specifications

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Product Details

  • Part Number
    MHT1002GN
  • Manufacturer
    NXP Semiconductors
  • Description
    350 W RF LDMOS Transistors for Consumer and Commercial Cooking

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    ISM, RF Energy
  • Application Type
    Consumer cooking, Commercial Cooking
  • Application
    ISM Band, Commercial
  • CW/Pulse
    CW
  • Frequency
    902 to 928 MHz
  • Power
    55.44 dBm
  • Power(W)
    350 W
  • CW Power
    350 W
  • P1dB
    55.9 dBm
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    20.7 dB
  • Power Added Effeciency
    66.9 %
  • VSWR
    10.0:1
  • Polarity
    N-Channel
  • Supply Voltage
    48 V
  • Threshold Voltage
    1.3 to 2.3 VDC
  • Input Power
    9 W
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.669
  • Drain Current
    51 to 100 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.24 °C/W
  • Package Type
    Flange
  • Package
    OM--780G--4L PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents

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