The MHT1002N is a 915 MHz high power RF transistor from Freescale that has been developed for RF heating products. It has a 350 watt output with 63% power added efficiency and a gain of 20 dB. The transistor requires a 50 V supply and is available in a flanged plastic package.

Product Specifications

  • Part Number
    MHT1002N
  • Manufacturer
    NXP Semiconductors
  • Description
    RF Power LDMOS Transistor for Consumer and Commercial Cooking, 915 MHz, 350 W, 48 V
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    ISM, RF Energy
  • Application
    ISM Band, Commercial
  • CW/Pulse
    Pulse, CW
  • Frequency
    915 MHz
  • Power
    55.44 dBm
  • Power(W)
    349.95 W
  • CW Power
    350 W
  • P1dB
    55.9 dBm
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    20.7 dB
  • VSWR
    10.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    48 V
  • Threshold Voltage
    1.3 to 2.3 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.669
  • Drain Current
    51 to 100 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.24 °C/W
  • Package Type
    Flange
  • Package
    OM--780--4L PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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