The MHT1004N from NXP Semiconductors is a RF LDMOS transistor that operates in the 2450 MHz ISM band. It delivers and output power of 300 W with a gain of 15.2 dB and an efficiency of 57.9%. This transistor requires an supply voltage of 32 Volts and consumes a power of 15 Watts. It is available in a OM-780-2L package and is ideal for consumer and commercial cooking applications.

Product Specifications

    Product Details

    • Part Number :
      MHT1004N
    • Manufacturer :
      NXP Semiconductors
    • Description :
      RF POWER LDMOS TRANSISTOR, 2450 MHz, 300 W, 32 V

    General Parameters

    • Transistor Type :
      LDMOS
    • Technology :
      Si
    • Application Industry :
      ISM, RF Energy
    • Application :
      ISM Band, Commercial
    • CW/Pulse :
      Pulse, CW
    • Frequency :
      2.45 GHz
    • Power :
      54.77 dBm
    • Power(W) :
      299.92 W
    • CW Power :
      300 W
    • P1dB :
      54.5 dBm
    • Power Gain (Gp) :
      15.2 dB
    • VSWR :
      5.00:1
    • Polarity :
      N-Channel
    • Supply Voltage :
      32 V
    • Threshold Voltage :
      1.6 to 2.4 Vdc
    • Voltage - Gate-Source (Vgs) :
      -6 to 10 Vdc
    • Drain Efficiency :
      0.579
    • Drain Current :
      100 mA
    • Impedance Zs :
      50 Ohms
    • Thermal Resistance :
      0.24 °C/W
    • Package Type :
      Flange
    • Package :
      OM--780--2L PLASTIC
    • RoHS :
      Yes
    • Operating Temperature :
      -40 to 150 Degree C
    • Storage Temperature :
      -65 to 150 Degree C

    Technical Documents

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