The MHT1004N from NXP Semiconductors is a RF LDMOS transistor that operates in the 2450 MHz ISM band. It delivers and output power of 300 W with a gain of 15.2 dB and an efficiency of 57.9%. This transistor requires an supply voltage of 32 Volts and consumes a power of 15 Watts. It is available in a OM-780-2L package and is ideal for consumer and commercial cooking applications.

Product Specifications

  • Part Number
    MHT1004N
  • Manufacturer
    NXP Semiconductors
  • Description
    RF POWER LDMOS TRANSISTOR, 2450 MHz, 300 W, 32 V
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    ISM, RF Energy
  • Application
    ISM Band, Commercial
  • CW/Pulse
    Pulse, CW
  • Frequency
    2.45 GHz
  • Power
    54.77 dBm
  • Power(W)
    299.92 W
  • CW Power
    300 W
  • P1dB
    54.5 dBm
  • Power Gain (Gp)
    15.2 dB
  • VSWR
    5.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    32 V
  • Threshold Voltage
    1.6 to 2.4 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.579
  • Drain Current
    100 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.24 °C/W
  • Package Type
    Flange
  • Package
    OM--780--2L PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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