The MHTG1200HS from NXP is an RF Power GaN Transistor that operates from 2400 to 2500 MHz. It provides an output power of 336 W with a gain of 15.3 dB and has an efficiency of 70.4 %. The transistor requires a DC supply of 50 V and has integrated ESD protection. It provides high gain and efficiency and has a case operating temperature of 150°C. The transistor is designed for use in CW, linear, cycling, and pulse applications. It is available in a surface-mount package and is ideal for ISM, and consumer and commercial cooking applications.