MHTG1200HS Image

The MHTG1200HS from NXP is an RF Power GaN Transistor that operates from 2400 to 2500 MHz. It provides an output power of 336 W with a gain of 15.3 dB and has an efficiency of 70.4 %. The transistor requires a DC supply of 50 V and has integrated ESD protection. It provides high gain and efficiency and has a case operating temperature of 150°C. The transistor is designed for use in CW, linear, cycling, and pulse applications. It is available in a surface-mount package and is ideal for ISM, and consumer and commercial cooking applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    NXP Semiconductors
  • Description
    300 W RF Power GaN Transistor for Cooking Applications

General Parameters

  • Technology
    GaN on SiC, GaN
  • Application
  • CW/Pulse
    CW, Pulse
  • Frequency
    2.4 to 2.5 GHz
  • Power
    54.8 dBm
  • Power(W)
    300 W
  • Gain
    15.2 dB
  • Efficiency
    73 %
  • Class
  • Supply Voltage
    50 V
  • Thermal Resistance
    0.52 ?/W
  • Package Type
    Surface Mount
  • RoHS