The MMRF1004NR1 from NXP Semiconductors is a RF Transistor with Frequency 1.6 to 2.2 GHz, Gain 15.5 dB, Power 30 dBm(1 W), P1dB 10 dBm, Supply Voltage 28 V. More details for MMRF1004NR1 can be seen below.

Product Specifications

  • Part Number
    MMRF1004NR1
  • Manufacturer
    NXP Semiconductors
  • Description
    N-Channel LDMOS Transistor from 1600 to 2200 MHz
  • Transistor Type
  • Polarity
    N-Channel
  • Application
    UHF, Bluetooth, Zigbee, GPS
  • Application Type
    Military, Radar, Wireless Communication, Aerospace
  • Class
    Class A, Class AB
  • Grade
    Military, Commercial, Space
  • Frequency
    1.6 to 2.2 GHz
  • Gain
    15.5 dB
  • Power
    30 dBm(1 W)
  • P1dB
    10 dBm
  • Supply Voltage
    28 V
  • Drain Current
    130 mA
  • Technology
    a
  • Effeciency
    0.15
  • IMD
    -34 dBc
  • Junction Temperature (Tj)
    225 Degree C
  • Voltage - Drain-Source (Vdss)
    -0.5 to 68 VDC
  • Voltage - Gate-Source (Vgs)
    -0.5 to 12 Vdc
  • Thermal Resistance
    2.3 Degree C/W
  • Package
    Flanged
  • RoHS
    Yes
  • Operating Temperature
    150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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