The MMRF1005H from NXP Semiconductors is a RF Transistor with Frequency 1300 to 1300 MHz, Power Gain (Gp) 22.7 dB@ 1300 MHz, Power 250 W(Peak), P1dB 250 W, Supply Voltage 50 V. More details for MMRF1005H can be seen below.

Product Specifications

  • Part Number
    MMRF1005H
  • Manufacturer
    NXP Semiconductors
  • Description
    1300 MHz, 250 W, 50 V Lateral N-Channel RF Power MOSFET
  • Transistor Type
  • Polarity
    N-Channel
  • Application Industry
    Defense, Commercial, Military
  • Application Type
    Military
  • Class
    Class AB
  • Frequency
    1300 to 1300 MHz
  • Power Gain (Gp)
    22.7 dB@ 1300 MHz
  • Power
    250 W(Peak)
  • P1dB
    250 W
  • Supply Voltage
    50 V
  • Test Signal
    Pulse
  • Effeciency
    0.57
  • Matching
    Input
  • Thermal Resistance
    0.07°C/W
  • Package
    Die
  • RoHS
    Yes
  • Note
    Connectors: Air Cavity 3
Click to view more product details on manufacturer's website  »
Need Help?

Need Help?

x
Let us know what you need, we can help find products that meet your requirement.