The MMRF1005H from NXP Semiconductors is a RF Transistor with Frequency 1.2 to 1.4 GHz, Power 53.62 to 53.62 dBm, Power(W) 230.14 W, P1dB 54 dBm, Duty_Cycle 0.1. Tags: Flange. More details for MMRF1005H can be seen below.

Product Specifications

    Product Details

    • Part Number :
      MMRF1005H
    • Manufacturer :
      NXP Semiconductors
    • Description :
      Lateral N-Channel RF Power MOSFET, 1300 MHz, 250 W, 50 V

    General Parameters

    • Transistor Type :
      LDMOS
    • Technology :
      Si
    • Application Industry :
      Wireless Infrastructure, Aerospace & Defence, Radar
    • Application :
      L Band, Radar
    • CW/Pulse :
      Pulse
    • Frequency :
      1.2 to 1.4 GHz
    • Power :
      53.62 to 53.62 dBm
    • Power(W) :
      230.14 W
    • P1dB :
      54 dBm
    • Peak Output Power :
      1000 W
    • Pulsed Power :
      250 W
    • Pulsed Width :
      200 us
    • Duty_Cycle :
      0.1
    • Power Gain (Gp) :
      21.5 to 24 dB
    • Input Return Loss :
      -25 dB
    • VSWR :
      10.00:1
    • Polarity :
      N-Channel
    • Supply Voltage :
      50 V
    • Threshold Voltage :
      1 to 2.7 Vdc
    • Breakdown Voltage - Drain-Source :
      120 V
    • Voltage - Gate-Source (Vgs) :
      -6 to 10 Vdc
    • Drain Efficiency :
      0.57
    • Drain Current :
      10 mA
    • Impedance Zs :
      50 Ohms
    • Thermal Resistance :
      0.07 °C/W
    • Package Type :
      Flange
    • Package :
      NI--780H--2L
    • RoHS :
      Yes
    • Operating Temperature :
      150 Degree C
    • Storage Temperature :
      -65 to 150 Degree C

    Technical Documents

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