The MMRF1005HR5 from NXP Semiconductors is a RF Transistor with Frequency 1.3 to 1.3 GHz, Gain 22.7 dB, Power 54 dBm(250 W), P1dB 250 dBm, Supply Voltage 50 V. More details for MMRF1005HR5 can be seen below.

Product Specifications

  • Part Number
    MMRF1005HR5
  • Manufacturer
    NXP Semiconductors
  • Description
    N-Channel LDMOS Transistor from 1300 to 1300 MHz
  • Transistor Type
  • Polarity
    N-Channel
  • Application
    UHF, Bluetooth, Zigbee, GPS
  • Application Type
    Military, Radar, Wireless Communication, Aerospace
  • Grade
    Military, Commercial, Space
  • Frequency
    1.3 to 1.3 GHz
  • Gain
    22.7 dB
  • Power
    54 dBm(250 W)
  • P1dB
    250 dBm
  • Supply Voltage
    50 V
  • Drain Current
    100 mA
  • Effeciency
    0.07
  • Junction Temperature (Tj)
    225 Degree C
  • Voltage - Drain-Source (Vdss)
    -0.5 to 120 VDC
  • Voltage - Gate-Source (Vgs)
    -6.0 to 10 Vdc
  • Thermal Resistance
    0.07 Degree C/W
  • Package
    Flanged
  • RoHS
    Yes
  • Operating Temperature
    150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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