The MMRF1006H from NXP Semiconductors is a RF Transistor with Frequency 10 to 500 MHz, Power Gain (Gp) 20 dB@ 450 MHz, Power 1000 W(Peak), P1dB 1000 W, Supply Voltage 50 V. More details for MMRF1006H can be seen below.
450 Watt, 50 Volt, 3.1 to 3.5 GHz, GaN RF IMFET
15 Watt, 50 Volt, DC to 4 GHz, GaN RF Transistor
15W, 300 MHz to 1.215 GHz, GaN RF Input-Matched Transistor
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