The MMRF1007H from NXP Semiconductors is a RF Transistor with Frequency 965 to 1215 MHz, Power Gain (Gp) 20 dB@ 1030 MHz, Power 1000 W(Peak), P1dB 1000 W, Supply Voltage 50 V. More details for MMRF1007H can be seen below.

Product Specifications

  • Part Number
    MMRF1007H
  • Manufacturer
    NXP Semiconductors
  • Description
    965-1215 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFET
  • Transistor Type
  • Polarity
    N-Channel
  • Application Industry
    Defense, Commercial, Military
  • Application Type
    Military
  • Class
    Class AB
  • Frequency
    965 to 1215 MHz
  • Power Gain (Gp)
    20 dB@ 1030 MHz
  • Power
    1000 W(Peak)
  • P1dB
    1000 W
  • Supply Voltage
    50 V
  • Test Signal
    Pulse
  • Effeciency
    0.56
  • Matching
    Unmatched
  • Thermal Resistance
    0.02°C/W
  • Package
    Die
  • RoHS
    Yes
  • Note
    Connectors: Air Cavity 5
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