The MMRF1008H from NXP Semiconductors is a RF Transistor with Frequency 960 MHz to 1.215 GHz, Power 44.39 dBm, Power(W) 27.48 W, P1dB 54.4 dBm, Duty_Cycle 0.1. More details for MMRF1008H can be seen below.

Product Specifications

  • Part Number
    MMRF1008H
  • Manufacturer
    NXP Semiconductors
  • Description
    Pulse Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Aerospace & Defence
  • Application
    Avionics, Commercial
  • CW/Pulse
    Pulse
  • Frequency
    960 MHz to 1.215 GHz
  • Power
    44.39 dBm
  • Power(W)
    27.48 W
  • CW Power
    27.5 W
  • P1dB
    54.4 dBm
  • Peak Output Power
    275 W
  • Pulsed Power
    275 W
  • Pulsed Width
    128 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    19 to 22 dB
  • Input Return Loss
    -14 to -9 dB
  • VSWR
    10.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    50 V
  • Threshold Voltage
    0.9 to 2.4 Vdc
  • Breakdown Voltage - Drain-Source
    110 V
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.655
  • Drain Current
    100 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.08 °C/W
  • Package Type
    Flange
  • Package
    NI--780H--2L
  • RoHS
    Yes
  • Operating Temperature
    150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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