The MMRF1009HR5 from NXP Semiconductors is a RF Transistor with Frequency 960 MHz to 1.21 GHz, Gain 19.7 dB, Power 57 dBm(500 W), P1dB 500 dBm, Supply Voltage 50 V. More details for MMRF1009HR5 can be seen below.

Product Specifications

  • Part Number
    MMRF1009HR5
  • Manufacturer
    NXP Semiconductors
  • Description
    N-Channel LDMOS Transistor from 960 to 1215 MHz
  • Transistor Type
  • Polarity
    N-Channel
  • Application
    UHF, Bluetooth, Zigbee, GPS
  • Application Type
    Military, Radar, Wireless Communication, Aerospace
  • Grade
    Military, Commercial, Space
  • Frequency
    960 MHz to 1.21 GHz
  • Gain
    19.7 dB
  • Power
    57 dBm(500 W)
  • P1dB
    500 dBm
  • Supply Voltage
    50 V
  • Drain Current
    200 mA
  • Effeciency
    0.62
  • Junction Temperature (Tj)
    225 Degree C
  • Voltage - Drain-Source (Vdss)
    -0.5 to 110 VDC
  • Voltage - Gate-Source (Vgs)
    -6.0 to 10 Vdc
  • Thermal Resistance
    0.044 Degree C/W
  • Package
    Flanged
  • RoHS
    Yes
  • Operating Temperature
    150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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