MMRF1017N Image

MMRF1017N

RF Transistor by NXP Semiconductors

The MMRF1017N from NXP Semiconductors is a RF Transistor with Frequency 720 to 960 MHz, Power 49.03 dBm, Power(W) 79.98 W, P1dB 54.5 dBm, Duty_Cycle 0.1. Tags: Flange. More details for MMRF1017N can be seen below.

Product Specifications

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Product Details

  • Part Number
    MMRF1017N
  • Manufacturer
    NXP Semiconductors
  • Description
    RF Power LDMOS Transistor, 720-960 MHz, 80 W Avg., 28 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, Radar
  • Application
    HF, VHF, UHF, Radar, OFDM
  • CW/Pulse
    Pulse, CW
  • Frequency
    720 to 960 MHz
  • Power
    49.03 dBm
  • Power(W)
    79.98 W
  • CW Power
    80 W
  • P1dB
    54.5 dBm
  • Peak Output Power
    1000 W
  • Pulsed Power
    1000 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    19 to 22 dB
  • Input Return Loss
    -17 to -10 dB
  • VSWR
    10.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    28 V
  • Threshold Voltage
    1 to 2 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.361
  • Drain Current
    1400 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.31 °C/W
  • Package Type
    Flange
  • Package
    OM--780--2L PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents

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