The MMRF1304L from NXP Semiconductors is a RF Transistor with Frequency 1.8 MHz to 2 GHz, Power 43.98 dBm, Power(W) 25 W, P1dB 44 dBm, Duty_Cycle 0.2. More details for MMRF1304L can be seen below.

Product Specifications

  • Part Number
    MMRF1304L
  • Manufacturer
    NXP Semiconductors
  • Description
    Wideband RF Power LDMOS Transistor, 1.8-2000 MHz, 25 W, 50 V
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, Radar
  • Application
    HF, VHF, UHF, Military, Radio, Communication, Radar
  • CW/Pulse
    Pulse, CW
  • Frequency
    1.8 MHz to 2 GHz
  • Power
    43.98 dBm
  • Power(W)
    25 W
  • CW Power
    25 W
  • P1dB
    44 dBm
  • Peak Output Power
    25 W
  • Pulsed Power
    25 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.2
  • Power Gain (Gp)
    24.5 to 27.5 dB
  • Input Return Loss
    -16 to -10 dB
  • VSWR
    65.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    50 V
  • Threshold Voltage
    1.5 to 2.5 Vdc
  • Breakdown Voltage - Drain-Source
    133 to 142 V
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.74
  • Drain Current
    10 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    1.4 °C/W
  • Package Type
    Flange
  • Package
    TO--270--2 PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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