The MMRF1305H from NXP Semiconductors is a RF Transistor with Frequency 0 to 2000 MHz, Power Gain (Gp) 27.2 dB@ 512 MHz, Power 100 W CW, P1dB 100 W, Supply Voltage 50 V. More details for MMRF1305H can be seen below.

Product Specifications

  • Part Number
    MMRF1305H
  • Manufacturer
    NXP Semiconductors
  • Description
    1.8-2000 MHz, 100 W, 50 V Broadband RF Power LDMOS Transistor
  • Transistor Type
  • Application Industry
    Military, Radio, Communication, Radar
  • Application Type
    Military, Wireless Infrastructure, Base Stations
  • Class
    Class AB
  • Frequency
    0 to 2000 MHz
  • Power Gain (Gp)
    27.2 dB@ 512 MHz
  • Power
    100 W CW
  • P1dB
    100 W
  • Supply Voltage
    50 V
  • Effeciency
    0.7
  • Matching
    Unmatched
  • Thermal Resistance
    0.38°C/W
  • Package
    Die
  • RoHS
    Yes
  • Note
    Connectors: Air Cavity 5
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