The MMRF1305HS is a ruggedized 100 watt RF power LDMOS transistor that operates from 1.8 MHz to 2000 MHz. It requires a supply from 30 to 50 V and is capable of performing into 65:1 VSWRs making it suitable for high load mismatch applications. This transistor is ideal for both narrowband and broadband CW pulse applications such as military/radio communications and radar applications.

Product Specifications

  • Part Number
    MMRF1305HS
  • Manufacturer
    NXP Semiconductors
  • Description
    1.8 to 2000 MHz 100 W LDMOS Transistor for Military, Radio Communications and Radar Applications Available in Ceramic and Flanged package
  • Transistor Type
  • Polarity
    N-Channel
  • Application
    Radio
  • Application Type
    Radar, Military, Communication
  • Frequency
    1.8 to 2000 MHz
  • Power Gain (Gp)
    25 to 27 dB
  • Power
    50 dBm, 100 W
  • Supply Voltage
    30 to 50 V
  • Breakdown Voltage - Drain-Source
    133 to 141 V
  • Drain Efficiency
    68 to 70%
  • Gate Leakage Current (Ig)
    400 nA
  • Feedback Capacitance
    0.24 pF
  • Input Capacitance
    73.6 pF
  • Input Return Loss
    -14 to -9 dB
  • VSWR
    65:1
  • Output Capacitance
    23.9 pF
  • Voltage - Drain-Source (Vdss)
    -0.5 V, 133 V
  • Voltage - Gate-Source (Vgs)
    -6 V, 10 V
  • Thermal Resistance
    0.38 Degrees C/W
  • Package
    Ceramic, Flanged
  • Operating Temperature
    -40 to 225 Degrees C
  • Storage Temperature
    -65 to 150 Degrees C
  • Note
    MMRF1305HR5- Flanged, MMRF1305HSR5-Ceramic
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