The MMRF1306H is a rugged 1.25 kW RF power LDMOS transistor designed for use in high VSWR CW and pulse applications such as HF, VHF and low-band UHF radar and radio communications. It operates from 1.8 to 600 MHz and requires a supply of 50 V. Multiple application circuits are available to demonstrate device performance at different frequencies and signal types.
490 W GaN HEMT Transistor from 2.11 to 2.17 GHz
30 W GaN HEMT from 13.75 to 14.5 GHz for SATCOM Applications
SiGe:C NPN Heterojunction Bipolar Transistor
You can now find similar products from multiple companies on everything RF.
Let us know what you need, we can help find products that meet your requirement.
Stay updated with the RF & Microwave Industry.
By signing up for our newsletter you agree to our Terms of Service and acknowledge receipt of our Privacy Policy.
By creating an account with us you agree to our Terms of Service and acknowledge receipt of our Privacy Policy.
Content submitted here will be sent to our editorial team who will review and consider it for publication on the website. you will be emailed if this content is published on everything RF.
Please click on the button in the email to get access to this section.
Processing...Please wait.
