The MMRF1306H is a rugged 1.25 kW RF power LDMOS transistor designed for use in high VSWR CW and pulse applications such as HF, VHF and low-band UHF radar and radio communications. It operates from 1.8 to 600 MHz and requires a supply of 50 V. Multiple application circuits are available to demonstrate device performance at different frequencies and signal types.

Product Specifications

  • Part Number
  • Manufacturer
    NXP Semiconductors
  • Description
    230 MHz, 1250 W CW, 50 V RF Power LDMOS Transistor
  • Transistor Type
  • Application
    HF, VHF, UHF
  • Application Industry
    Communication, Radar, Radio, communication
  • Application Type
    Military, Wireless Infrastructure, Base Stations
  • Class
    Class AB
  • Frequency
    1.8 to 600 MHz
  • Power Gain (Gp)
    22.9 dB@ 230 MHz
  • Power
    1250 W CW
  • P1dB
    1250 W
  • Supply Voltage
    50 V
  • Effeciency
  • Matching
  • Thermal Resistance
  • Package
  • RoHS
  • Note
    Connectors: Air Cavity 5
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