The MMRF1306H is a rugged 1.25 kW RF power LDMOS transistor designed for use in high VSWR CW and pulse applications such as HF, VHF and low-band UHF radar and radio communications. It operates from 1.8 to 600 MHz and requires a supply of 50 V. Multiple application circuits are available to demonstrate device performance at different frequencies and signal types.
490 W GaN HEMT Transistor from 2.11 to 2.17 GHz
30 W GaN HEMT from 13.75 to 14.5 GHz for SATCOM Applications
SiGe:C NPN Heterojunction Bipolar Transistor
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