The MMRF1306H is a rugged 1.25 kW RF power LDMOS transistor designed for use in high VSWR CW and pulse applications such as HF, VHF and low-band UHF radar and radio communications. It operates from 1.8 to 600 MHz and requires a supply of 50 V. Multiple application circuits are available to demonstrate device performance at different frequencies and signal types.

Product Specifications

  • Part Number
    MMRF1306H
  • Manufacturer
    NXP Semiconductors
  • Description
    Lateral N-Channel Broadband RF Power MOSFET, 10-500 MHz, 1000 W, 50 V
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, Radar
  • Application
    HF, VHF, UHF, Radio, Communication, Radar
  • CW/Pulse
    Pulse, CW
  • Frequency
    1.8 to 600 MHz
  • Power
    60.97 dBm
  • Power(W)
    1250.26 W
  • CW Power
    1250 W
  • P1dB
    61 dBm
  • Peak Output Power
    1250 W
  • Pulsed Power
    1250 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.2
  • Power Gain (Gp)
    23 to 26 dsB
  • Input Return Loss
    -14 to -10 dB
  • VSWR
    65.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    50 V
  • Threshold Voltage
    1.7 to 2.7 Vdc
  • Breakdown Voltage - Drain-Source
    133 V
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.746
  • Drain Current
    100 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.15 °C/W
  • Package Type
    Flange
  • Package
    NI--1230H--4S
  • RoHS
    Yes
  • Operating Temperature
    150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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