The MMRF1306HR5 from NXP Semiconductors is a RF Transistor with Frequency 1.8 to 600 MHz, Gain 22.9 dB, Power 61 dBm(1250 W), P1dB 1250 dBm, Supply Voltage 50 V. More details for MMRF1306HR5 can be seen below.

Product Specifications

  • Part Number
    MMRF1306HR5
  • Manufacturer
    NXP Semiconductors
  • Description
    N-Channel LDMOS Transistor from 1.8 to 600 MHz
  • Transistor Type
  • Polarity
    N-Channel
  • Application
    UHF, Bluetooth, Zigbee, GPS
  • Application Type
    Military, Radar, Wireless Communication, Aerospace
  • Grade
    Military, Commercial, Space
  • Frequency
    1.8 to 600 MHz
  • Gain
    22.9 dB
  • Power
    61 dBm(1250 W)
  • P1dB
    1250 dBm
  • Supply Voltage
    50 V
  • Drain Current
    100 mA
  • Effeciency
    0.746
  • Junction Temperature (Tj)
    -40 to 225 Degree C
  • Voltage - Drain-Source (Vdss)
    -0.5 to 133 VDC
  • Voltage - Gate-Source (Vgs)
    -6.0 to 10 Vdc
  • Thermal Resistance
    0.15 Degree C/W
  • Package
    Flanged
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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