MMRF1310H Image

MMRF1310H

RF Transistor by NXP Semiconductors

The MMRF1310H from NXP Semiconductors is a RF Transistor with Frequency 1.8 to 600 MHz, Power 54.77 dBm, Power(W) 299.92 W, P1dB 54.8 dBm, Duty_Cycle 0.2. Tags: Flange. More details for MMRF1310H can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    MMRF1310H
  • Manufacturer
    NXP Semiconductors
  • Description
    Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, Radar, Broadcast
  • Application
    HF, VHF, UHF, Radio, Radar, Mobile, Military
  • CW/Pulse
    Pulse, CW
  • Frequency
    1.8 to 600 MHz
  • Power
    54.77 dBm
  • Power(W)
    299.92 W
  • CW Power
    300 W
  • P1dB
    54.8 dBm
  • Peak Output Power
    300 W
  • Pulsed Power
    300 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.2
  • Power Gain (Gp)
    25 to 28 dB
  • Input Return Loss
    -16 to -9 dB
  • VSWR
    65.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    50 V
  • Threshold Voltage
    1.7 to 2.7 Vdc
  • Breakdown Voltage - Drain-Source
    133 V
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.8
  • Drain Current
    100 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.19 °C/W
  • Package Type
    Flange
  • Package
    NI--780H--4L
  • RoHS
    Yes
  • Operating Temperature
    150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents

Need Help Finding a Product?

Need Help?

Let us know what you need, we can help find products that meet your requirement.