MMRF1312GS Image

MMRF1312GS

The MMRF1312GS from NXP Semiconductors is a RF Transistor with Frequency 900 MHz to 1.215 GHz, Power(W) 1000 W, P1dB 60 dBm, Duty_Cycle 0.1, Power Gain (Gp) 18.5 to 22 dB. Tags: Flange. More details for MMRF1312GS can be seen below.

Product Specifications

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Product Details

  • Part Number
    MMRF1312GS
  • Manufacturer
    NXP Semiconductors
  • Description
    RF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, Radar
  • Application
    Avionics, Military, L Band, Radar
  • CW/Pulse
    Pulse, CW
  • Frequency
    900 MHz to 1.215 GHz
  • Power(W)
    1000 W
  • CW Power
    1000 W
  • P1dB
    60 dBm
  • Peak Output Power
    1200 to 1615 W
  • Pulsed Power
    1200 to 1615 W
  • Pulsed Width
    128 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    18.5 to 22 dB
  • Input Return Loss
    -15 to -9 dB
  • VSWR
    20.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    52 V
  • Threshold Voltage
    1.3 to 2.3 Vdc
  • Breakdown Voltage - Drain-Source
    112 V
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.54
  • Drain Current
    100 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.017 °C/W
  • Package Type
    Flange
  • Package
    NI--1230GS--4L
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents

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