The MMRF1312H is a RF power LDMOS Transistor that operates from 900 MHz to 1215 MHz. The devices are suitable for use in pulse applications with large duty cycles and long pulses and are ideal for use in high power military and commercial L--Band radar applications such as IFF and DME/TACAN. It can provide a peak power output of 1615 Watts with a gain of 15 dB and efficiency over 50%.

Product Specifications

  • Part Number
    MMRF1312H/HS
  • Manufacturer
    NXP Semiconductors
  • Description
    900 MHz to 1.215 GHz, LDMOS Transistor, MOSFET
  • Transistor Type
  • Polarity
    N-Channel
  • Application
    L Band
  • Application Type
    Radar, Military, Commercial
  • Grade
    Military, Commercial
  • Frequency
    900 MHz to 1.215 GHz
  • Gain
    15.2 to 19.2 dBi
  • Power
    1200 to 1615 W
  • P1dB
    60 to 62 dBm
  • Supply Voltage
    52 V
  • Drain Efficiency
    54 to 58.5 %
  • Base Current (Ib)
    100 mA
  • VSWR
    20:10:01
  • Voltage - Drain-Source (Vdss)
    -0.5 to 112 V
  • Voltage - Gate-Source (Vgs)
    -0.6 to 10 V
  • Package Type
    Surface Mount, Ceramic
  • Package
    NI--1230H--4S, Eared, NI--1230S--4S, Earless, NI--1230GS--4L, Gull Wing
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • Tags
    NXP - LDMOS Transistors
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